Four-target magnetron sputtering coating system with a transfer chamber

Category: Magnetron sputtering system

This four-target magnetron sputtering coating system with a transfer chamber is a vacuum deposition equipment capable of simultaneously sputtering multiple materials and featuring an independent pre-pumping chamber. Thin films are deposited by plasma bombardment of the target materials, while the transfer chamber prevents atmospheric contamination and enhances vacuum efficiency. Applications: Preparation of multilayer thin films of metals, alloys, oxides, and other materials for research and device fabrication. Features: simultaneous multi-target sputtering, uniform film deposition, no substrate contamination, excellent vacuum continuity, and suitability for high-quality thin-film growth.

Overview

Technical Specifications

This four-target magnetron sputtering coating system is a cost-effective, independently developed product of our company, featuring standardization, modularity, and customizable options. The magnetron targets are available in 1-inch, 2-inch, 3-inch, and 4-inch sizes, allowing customers to select the size that best matches the dimensions of their substrates. The system is equipped with a 500 W DC power supply and a 500 W RF power supply: the DC power supply is suitable for depositing metallic films, while the RF power supply is ideal for non-metallic films. With four targets, the system can accommodate multi-layer or sequential coating processes. For additional coating requirements, custom RF and pulsed power supplies can be configured; all power supply models are available in a range of specifications from 300 W to 1000 W.

Key features: 
1. It comprises a main chamber and a transition chamber; the transition chamber is equipped with a magnetic push rod, and a vacuum gate valve is installed between the two chambers. 
2. While sputtering is underway in the main chamber, samples can be loaded into the transfer chamber and subjected to preliminary vacuum pumping. Once sputtering in the main chamber is complete, the samples can be transferred into the main chamber’s sample holder via a magnetic push rod. This design reduces the number of times the main chamber needs to be evacuated, thereby saving time, maintaining a superior local vacuum, and effectively improving coating quality. 
3. It can be used to prepare single-layer or multi-layer ferroelectric films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, oxide films, hard coatings, polytetrafluoroethylene films, and more. 
4. Its compact size makes it easy to operate, making it an ideal device for laboratory-scale preparation of thin films. The high-vacuum environment throughout the entire evaporation process ensures that evaporated atoms or molecules reach the substrate directly, thereby preventing contamination by airborne impurities. 
5. High-vacuum conditions help minimize oxidation of the evaporation material, thereby further enhancing the purity and performance of the thin film.

Sample PlatformExternal dimensionsφ150mm
Temperature control accuracy±1℃
Heating rangeRoom temperature to 900°C
Adjustable speedAdjustable from 1 to 20 rpm
 Sputtering directionSputtering downward
Magnetic Control Target GunAdjustable range of the head-target angle-45° to 45°, equipped with a pneumatic shutter
 Target material dimensionsDiameter: 4 inches; thickness ≤ 3 mm
 Insulation voltage>2000V
 QuantityThree 4-inch swinging targets; one 4-inch stationary target.
 Cooling methodWater cooling
 Cavity TypeD-shaped cavity
Vacuum cavityCavity dimensionsΦ500mm × 500mm
 Cavity material304 stainless steel
 Observation WindowQuartz window, diameter φ100mm
 Activation methodFront door open
Gas ControlTraffic Control3-way mass flow meter:
Measurement range: 0–500 SCCM;
Measurement range: 0–100 SCCM
Measurement range: 0–20 SCCM
Bipolar Pulse Magnetron Sputtering Power SupplyInput voltage: 380 VAC ±10%, three-phase four-wire system, 50–60 Hz
Output power: 0–5 kW
Output voltage: 0–1000 V
Output current can reach 9 A (at constant power).
Output frequency: 1 kHz – 150 kHz
Output Characteristics: Constant Current / Constant Power / Constant Voltage
Cooling method: Air-cooled
Communication method: 0–5 V or 0–10 V analog signal, RS-485
100% duty cycle
Quantity: 1 unit
Radio Frequency Power SupplyPower supply wattage1000W
Power Output Range0W-1000W
Achievable output power1000W
Achievable Reflection Power130W
Radio frequency13.56 MHz ±0.005% stability
Quantity1 unit
Direct Current Power SupplyPower1000W
Quantity2 units
Molecular pumpMolecular pump pumping speed1200L/S
Cooling methodWater cooling
Degree of vacuum9.0×10⁻⁴ Pa
Pumping speed of the forepump4L/S
Composite vacuum gaugeMeasurement range: 10⁻⁵ Pa to 10⁵ Pa
Quantity1 set
Vacuum valveElectro-pneumatic valve
Transition ChamberCavity dimensions accommodate wafers up to 6 inches in diameter.
Equipped with a molecular pump unit:
Front pump: VRD-4, pumping speed 1.1 L/s
Molecular pump: Japanese TG60F, pumping speed 60 L/s
Film thickness gaugeQuantity: 1 set
Number of channels: Single channel
Measurement accuracy: 1 Å
Standard sensor quartz crystal: 6 MHz
Applicable quartz crystal size: φ14mm
Water chillerTemperature control range: 10–25°C
Rated cooling capacity: 0.75 kW
Flow rate: 10 L/min
Cooling water: purified water
Air compressorRotational speed: 1380 rpm
Flow rate: 40 liters/minute
Rated discharge pressure: 0.7 MPa
Control SystemPLC + 14.3-inch touch screen

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