Four-target magnetron sputtering coating system with a transfer chamber
Category: Magnetron sputtering system
Overview
Technical Specifications
This four-target magnetron sputtering coating system is a cost-effective, independently developed product of our company, featuring standardization, modularity, and customizable options. The magnetron targets are available in 1-inch, 2-inch, 3-inch, and 4-inch sizes, allowing customers to select the size that best matches the dimensions of their substrates. The system is equipped with a 500 W DC power supply and a 500 W RF power supply: the DC power supply is suitable for depositing metallic films, while the RF power supply is ideal for non-metallic films. With four targets, the system can accommodate multi-layer or sequential coating processes. For additional coating requirements, custom RF and pulsed power supplies can be configured; all power supply models are available in a range of specifications from 300 W to 1000 W.
Key features:
1. It comprises a main chamber and a transition chamber; the transition chamber is equipped with a magnetic push rod, and a vacuum gate valve is installed between the two chambers.
2. While sputtering is underway in the main chamber, samples can be loaded into the transfer chamber and subjected to preliminary vacuum pumping. Once sputtering in the main chamber is complete, the samples can be transferred into the main chamber’s sample holder via a magnetic push rod. This design reduces the number of times the main chamber needs to be evacuated, thereby saving time, maintaining a superior local vacuum, and effectively improving coating quality.
3. It can be used to prepare single-layer or multi-layer ferroelectric films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, oxide films, hard coatings, polytetrafluoroethylene films, and more.
4. Its compact size makes it easy to operate, making it an ideal device for laboratory-scale preparation of thin films. The high-vacuum environment throughout the entire evaporation process ensures that evaporated atoms or molecules reach the substrate directly, thereby preventing contamination by airborne impurities.
5. High-vacuum conditions help minimize oxidation of the evaporation material, thereby further enhancing the purity and performance of the thin film.
| Sample Platform | External dimensions | φ150mm |
| Temperature control accuracy | ±1℃ | |
| Heating range | Room temperature to 900°C | |
| Adjustable speed | Adjustable from 1 to 20 rpm | |
| Sputtering direction | Sputtering downward | |
| Magnetic Control Target Gun | Adjustable range of the head-target angle | -45° to 45°, equipped with a pneumatic shutter |
| Target material dimensions | Diameter: 4 inches; thickness ≤ 3 mm | |
| Insulation voltage | >2000V | |
| Quantity | Three 4-inch swinging targets; one 4-inch stationary target. | |
| Cooling method | Water cooling | |
| Cavity Type | D-shaped cavity | |
| Vacuum cavity | Cavity dimensions | Φ500mm × 500mm |
| Cavity material | 304 stainless steel | |
| Observation Window | Quartz window, diameter φ100mm | |
| Activation method | Front door open | |
| Gas Control | Traffic Control | 3-way mass flow meter: |
| Measurement range: 0–500 SCCM; | ||
| Measurement range: 0–100 SCCM | ||
| Measurement range: 0–20 SCCM | ||
| Bipolar Pulse Magnetron Sputtering Power Supply | Input voltage: 380 VAC ±10%, three-phase four-wire system, 50–60 Hz | |
| Output power: 0–5 kW | ||
| Output voltage: 0–1000 V | ||
| Output current can reach 9 A (at constant power). | ||
| Output frequency: 1 kHz – 150 kHz | ||
| Output Characteristics: Constant Current / Constant Power / Constant Voltage | ||
| Cooling method: Air-cooled | ||
| Communication method: 0–5 V or 0–10 V analog signal, RS-485 | ||
| 100% duty cycle | ||
| Quantity: 1 unit | ||
| Radio Frequency Power Supply | Power supply wattage | 1000W |
| Power Output Range | 0W-1000W | |
| Achievable output power | 1000W | |
| Achievable Reflection Power | 130W | |
| Radio frequency | 13.56 MHz ±0.005% stability | |
| Quantity | 1 unit | |
| Direct Current Power Supply | Power | 1000W |
| Quantity | 2 units | |
| Molecular pump | Molecular pump pumping speed | 1200L/S |
| Cooling method | Water cooling | |
| Degree of vacuum | 9.0×10⁻⁴ Pa | |
| Pumping speed of the forepump | 4L/S | |
| Composite vacuum gauge | Measurement range: 10⁻⁵ Pa to 10⁵ Pa | |
| Quantity | 1 set | |
| Vacuum valve | Electro-pneumatic valve | |
| Transition Chamber | Cavity dimensions accommodate wafers up to 6 inches in diameter. | |
| Equipped with a molecular pump unit: | ||
| Front pump: VRD-4, pumping speed 1.1 L/s | ||
| Molecular pump: Japanese TG60F, pumping speed 60 L/s | ||
| Film thickness gauge | Quantity: 1 set | |
| Number of channels: Single channel | ||
| Measurement accuracy: 1 Å | ||
| Standard sensor quartz crystal: 6 MHz | ||
| Applicable quartz crystal size: φ14mm | ||
| Water chiller | Temperature control range: 10–25°C | |
| Rated cooling capacity: 0.75 kW | ||
| Flow rate: 10 L/min | ||
| Cooling water: purified water | ||
| Air compressor | Rotational speed: 1380 rpm | |
| Flow rate: 40 liters/minute | ||
| Rated discharge pressure: 0.7 MPa | ||
| Control System | PLC + 14.3-inch touch screen | |
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