Three-Target Magnetron Sputtering Coating System with a Transition Chamber
Category: Magnetron sputtering system
Overview
Technical Specifications
This product is a three-target magnetron sputtering coating system with a transition chamber, a precision instrument specifically designed for the preparation of metallic thin films. It meets both research and practical application needs, with a structural design tailored to laboratory settings and related industrial applications, ensuring stable and reliable performance. Its primary function is the efficient deposition of metallic thin films, making it widely used in industries such as electronics, optics, and the production of advanced ceramics. Additionally, it is compatible with SEM sample preparation in laboratories, satisfying diverse application requirements for scientific research, experimental studies, and new-materials development.
Key features:
1. Multi-target synergy for multi-layer coating: Equipped with three magnetron sputtering targets and two DC power supplies, this system enables flexible deposition of multi-layer conductive metal films, accommodating diverse film-layer requirements and enhancing operational flexibility.
2. Dual-chamber design for high efficiency and energy savings: The system features a separate main chamber and a transfer chamber, with the transfer chamber equipped with a magnetic push rod and a vacuum gate valve between the two chambers. This configuration allows for sputtering to proceed concurrently with sample loading and pre-vacuum pumping, thereby reducing the number of vacuum pumping cycles in the main chamber and significantly saving time.
3. Controllable vacuum for enhanced coating quality: The dual-chamber independent vacuum design effectively maintains the local vacuum level in the main chamber, minimizes impurity interference, and significantly improves film density and uniformity, thereby delivering high-quality coating results.
| Sample stage | External dimensions | Φ360mm |
| Adjustable speed | Adjustable from 1 to 20 rpm | |
| Magnetic Control Target Gun | Target plane | Circular planar target |
| Sputtering vacuum | 0.1 Pa to 3 Pa | |
| Target diameter | 100–101.6 mm | |
| Target thickness | 3mm | |
| Insulation voltage | >2000V | |
| Cable Specifications | SL-16 | |
| Target head temperature | ≦65℃ | |
| Vacuum chamber | Inner wall treatment | Electropolishing |
| Cavity dimensions | Φ500mm × 500mm | |
| Cavity material | 304 stainless steel | |
| Observation Window | Quartz window, diameter φ100mm | |
| Activation Method | Side opening | |
| Gas Control | Traffic Control | Mass flow meter, range 0–100 SCCM |
| Types of gases | Optional gases include argon, nitrogen, oxygen, and more. | |
| Control Valve Type | Electromagnetic control valve | |
| Static state of the control valve | Normally Closed | |
| Measure linearity | ±1.5% F.S | |
| Measurement repeatability | ±0.2% F.S | |
| Measure response time | ≤8 seconds (T95) | |
| Operating pressure differential range | 0.3MPa | |
| Valve body pressure rating | 3MPa | |
| Operating ambient temperature | (5–45)°C | |
| Valve body material | Stainless steel 316L | |
| Valve body leak rate | 1×10⁻⁸ Pa·m³/s | |
| Pipe fitting | 1/4″ ferrule fitting | |
| Input/Output Signals | 0–5 V | |
| Power supply | ±15 V (±5%) (+15 V, 50 mA; −15 V, 200 mA) | |
| External dimensions mm | 130 (width) × 102 (height) × 28 (thickness) | |
| Communication interface | RS485 MODBUS Protocol | |
| DC power supply | Power supply wattage | 1500W |
| Film thickness measurement | Power Requirements | DC: 5V (±10%) * High current 400mA |
| Resolution | ±0.03 Hz (5–6 MHz), 0.0136 Å / measurement (aluminum) | |
| Measurement accuracy | ±0.5% thickness + 1 count | |
| Measurement cycle | 100 ms to 1 s per measurement (adjustable) | |
| Measurement range | 500,000 Å (aluminum) | |
| Crystal frequency | 6MHz | |
| Communication interface | RS-232/485 serial interface | |
| Display Digits | 8-digit LED display | |
| Molecular pump | Molecular pump pumping speed | 1200L/S |
| Rated speed | 24000rpm | |
| Vibration value | ≦0.1 µm | |
| Startup Time | 5min | |
| Downtime | 7min | |
| Cooling method | Water cooling + air cooling | |
| Cooling water temperature | ≦37℃ | |
| Coolant flow rate | 1L/min | |
| Installation Direction | Vertical ±5° | |
| Vacuum port | 150CF | |
| Exhaust port | KF40 | |
| Front-stage pump | Pumping speed | VRD-16 |
| Ultimate vacuum | 1Pa | |
| Power supply | AC: 220V/50Hz | |
| Motor power | 400W | |
| Noise | ≦56 dB | |
| Vacuum port | KF40 | |
| Exhaust port | KF25 | |
| Valve | Gate valve | A gate valve is installed between the vacuum chamber and the molecular pump. |
| Shut-off valve | A shut-off valve is installed between the molecular pump and the backing pump. | |
| Bypass valve | A bypass valve is installed between the vacuum chamber and the forepump. | |
| Bleed valve | An electromagnetic vent valve is installed on the vacuum chamber. | |
| Ultimate vacuum of the entire machine | ≦5×10⁻⁴ Pa | |
| Test target material | One nickel target with a diameter of 4 inches and a thickness of 3 mm | |
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