Semiconductor Thin-Film Electron-Beam Evaporation Coater

Category: Electron-beam evaporation

This product is an electron-beam evaporation coating system, primarily used for the preparation of various conductive films, semiconductor films, ferroelectric films, and optical films, as well as for micro- and nano-fabrication of microdevices and for the pre-treatment of electron microscopy samples. It is particularly well suited for the evaporation deposition of a wide range of refractory metal materials.

Overview

Technical Specifications

In an ultra-high vacuum environment, the electron gun generates a high-energy electron beam that is precisely focused and deflected by electromagnetic lenses to bombard the target material housed in a water-cooled crucible, converting kinetic energy into localized high temperatures and causing the target material to undergo instantaneous evaporation or sublimation. The resulting gaseous atoms and molecules then travel in straight lines through the vacuum and deposit on the cold substrate surface, where they condense, nucleate, and grow to form a continuous, dense thin film.

Its characteristics and advantages:
1. High film purity: Evaporation deposition under high-vacuum conditions prevents oxidation and impurity contamination, resulting in exceptionally clean films that meet the stringent requirements of the semiconductor industry.
2. Excellent film-forming quality: The electron beam features concentrated energy, resulting in a dense, highly adherent, and uniformly coated film with few defects and high stability.
3. Wide material compatibility: capable of vapor-depositing a variety of materials, including metals, dielectrics, and oxides, making it suitable for the fabrication of semiconductor electrodes, insulating layers, and passivation layers.
4. Precise film-thickness control: Enables nanometer-level thickness precision with excellent repeatability, making it ideal for the fabrication of high-precision micro- and nano-devices.
5. Clean and environmentally friendly process: no waste liquids or exhaust gases, minimal thermal impact, and low damage to the substrate, making it ideal for processing sensitive semiconductor materials and precision devices.

Sample stage External dimensions <150 mm, sample stage is rotatable
Adjustable temperature ≦500℃
Electron gun New-type electron gun, 6-hole crucible
Heating lamp Four halogen heating lamps are used for degassing, and one neon lamp is used for illumination.
Vacuum chamber Cavity dimensions Φ500*H500mm
Observation Window Diameter φ100mm
Cavity Material 304 stainless steel
Activation Method Front-opening type
Film thickness measurement Monitoring is performed using an SQM160 film-thickness gauge, with coating thickness non-uniformity less than 6%.
Vacuum system Front-stage pump Two-stage rotary vane pump, gas pumping speed 1.1 L/s
Secondary pump Turbomolecular pump, gas pumping speed 600 L/s
Vacuum measurement Combined vacuum gauge (ionization gauge + resistance gauge)
System vacuum 5×10⁻⁵ Pa
Water-cooling system Water pressure < 2.5 bar, water pressure monitoring
Heating lamp Four halogen heating lamps are used for degassing, and one neon lamp is used for illumination.
Electrode interface With two metal steam-generation electrode interfaces
Control System HYXK’s self-developed professional-grade controller
Other parameters Power supply AC 380V, 50Hz
Overall dimensions 1000mm × 800mm × 1500mm
Total machine power 20KW
Overall weight 350kg

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