PLD Pulsed Laser Sputtering Deposition Equipment
Category： Vapor deposition
Overview
Technical Specifications
This PLD pulsed laser deposition–coating system comprises a pulsed laser deposition growth chamber, a sample introduction chamber, and a magnetron sputtering pre-treatment chamber. Each chamber is equipped with its own independent vacuum system, and the chambers are interconnected via a sample transfer rod. The system employs high-energy pulsed lasers to bombard target materials in a vacuum or a controlled atmosphere, causing them to vaporize and ionize into a plasma plume, which is then deposited onto a substrate to form high-quality thin films. It is an advanced deposition tool primarily used for fabricating various functional thin films and novel materials, particularly well suited for multi-component films such as complex oxides, superconductors, ferroelectrics, piezoelectrics, and semiconductors, while effectively preserving the stoichiometric composition of the target materials. The system can deposit metals, ceramics, and high-temperature refractory materials, and finds broad applications in the research and development of microelectronics, optoelectronic devices, sensors, energy-storage materials, and catalytic materials, serving as a critical piece of experimental equipment for materials science and device fabrication.
Its characteristics and advantages:
1. High compositional fidelity: The target material and the thin film exhibit a highly consistent stoichiometry, making this approach well suited for the preparation of complex oxides and multi-component functional thin films.
2. Broad material compatibility: capable of depositing metals, semiconductors, oxides, superconductors, and high-temperature refractory materials, with particular advantages for high-melting-point materials.
3. Excellent deposition quality: High-energy pulsed laser sputtering yields films with high density, strong adhesion, few defects, and excellent crystallinity.
4. Flexible and controllable processing: Deposition can be carried out under vacuum or in a controlled atmosphere, enabling easy tuning of crystallographic orientation, grain size, and interfacial structure.
5. Low contamination and high precision: no crucible contamination, excellent control over film thickness, minimal thermal damage to the substrate, and ideal for R&D in semiconductors and optoelectronic devices.
| Injection Room | Material | Stainless steel |
| Leak rate | ≤1×10⁻⁷ Pa·L/s, | |
| Ultimate vacuum | ≤1×10⁻⁵ Pa | |
| Structure | The vacuum chamber is equipped with corresponding flanged ports for connecting the sample transfer rod, vacuum pump, quick-opening door, vacuum gauge, vent valve, and other components. | |
| Independent vacuum generation and vacuum detection assemblies, including the required valves. | ||
| Size | The sample injection chamber can accommodate ≥3 2-inch samples. | |
| Heating | Equipped with a heating stage for sample heating, baking, and degassing, as well as a heating source and temperature-control power supply, it can achieve temperatures of ≥300°C. | |
| Cleaning function | The sample can undergo DC discharge plasma cleaning and is equipped with a high-voltage power supply and a motor drive system. | |
| Plasma cleaning gas | The process gas for plasma cleaning of samples is hydrogen or oxygen, and a dedicated process gas supply system is provided. | |
| Magnetic Sample Transfer Rod | Quantity: 2 | |
| Location: Connects the pulsed laser deposition film-forming chamber and the magnetron sputtering pre-treatment chamber, respectively. | ||
| Pulsed Laser Deposition Chamber | Vacuum Chamber Material | Stainless steel |
| Leak rate | ≤5×10⁻⁸ Pa·L/s | |
| Ultimate vacuum | ≤1×10⁻⁷ Pa | |
| Laser incidence on a quartz window | Quantity * 2 | |
| Optical path height: 1200 mm | ||
| Observation window | Quantity × 3 equipped with observation window shutters | |
| Infrared Temperature Measurement Window | An infrared temperature measurement window is reserved, tilted at a 45° angle toward the sample stage. | |
| Vacuum system | Molecular pump + mechanical pump | |
| Molecular pump pumping speed: 1200 L/s | ||
| Forepump pumping speed: 8 L/s | ||
| Configure a side-pumping system for the molecular pump | ||
| Vacuum measurement | Full-Range Composite Vacuum Gauge | |
| Air circuit | Equipped with two high-precision gas lines, one for oxygen and one for hydrogen, each fitted with a control needle valve and a mass flow meter; the respective gas flow rates are 100 sccm and 5 sccm. | |
| The gas can be delivered via a linear actuator, brought close to the sample surface, and directly sprayed onto the sample. | ||
| Sample stage | The rotating target platform’s speed is adjustable. | |
| Cavity interface | The vacuum chamber is pre-equipped with dedicated interfaces for connecting the substrate drive mechanism, laser target drive mechanism, vacuum generation and monitoring system, high-energy electron gun and fluorescent screen, sample introduction chamber, and other components. | |
| Laser target material | Quantity | Number of targets ≥ 6 |
| Size | The size of the laser-irradiated target ≥ 25 | |
| Adjustment Range of Target and Substrate | 30–100 mm, adjustable from outside the chamber | |
| Rotate | Switching is accomplished through the target’s orbital motion; | |
| Each target material can rotate about its own axis at a speed of ≥30 rpm. | ||
| The target’s orbital and rotational motions are motor-controlled and equipped with control software. | ||
| Substrate Heating Stage | Substrate size | 2 inches; |
| Heating temperature | The heating mechanism employs SiC heating elements; | |
| Equipped with a temperature-controlled power supply, the substrate heating temperature exceeds 800°C with an accuracy of less than 1°C. | ||
| Mobile | The substrate stage supports four-axis motion, with a radial travel range of no less than 100 mm and a lateral travel range of no less than 20 mm. | |
| Rotate | In-plane rotary motor drive, capable of achieving a rotational speed of ≥30 rpm with continuous adjustment. | |
| Reflection High-Energy Electron Diffraction Gun | System | Equipped with a reflection high-energy electron diffraction gun, a high-energy electron gun, a control power supply, a fluorescent screen, and a vacuum system. |
| High-energy electrons can achieve energy. | ≥25keV | |
| Function | The electron beam spot has focusing and deflection functions; | |
| Protection | The electron gun features a self-locking protection function. | |
| Differential extraction | Equipped with a differential pumping function, enabling operation under high vacuum conditions of ≥10 Pa. | |
| Pumps and Valves | Equipped with a differential vacuum pump and valves | |
| Magnetron Sputtering Pre-treatment Chamber | Vacuum chamber | 1. Made of stainless steel, with a leak rate ≤ 5×10⁻⁸ Pa·L/s and a ultimate vacuum ≤ 1×10⁻⁷ Pa; |
| 2. Two observation windows, each equipped with an observation-window shutter; | ||
| 3. Vacuum is achieved through a combination of molecular pumps and mechanical pumps, with pumping speeds of 1200 L/s and 8 L/s, respectively, and equipped with a full-range vacuum gauge. | ||
| 4. The vacuum chamber is equipped with multiple flanged ports for connecting the substrate drive mechanism, magnetron sputtering target, argon ion gun, quartz oscillation film-thickness monitor, vacuum pumping and monitoring systems, and the sample-loading chamber, among others. | ||
| Equipped with a single high-precision argon gas line, including a control needle valve and a mass flow meter for the gas, with a gas flow rate of 100 sccm. | ||
| An additional inlet air line interface shall be reserved, and a fixed mounting location for the mass flow meter shall be provided on the equipment. | ||
| A side-extraction mechanism is designed to facilitate the maintenance of the working gas pressure. | ||
| Substrate Heating | Substrate size: 2 inches; | |
| The heating mechanism employs SiC heating elements; | ||
| Equipped with a temperature-controlled power supply, the substrate heating temperature exceeds 800°C with an accuracy of better than ±1°C. | ||
| The substrate stage supports four-dimensional motion, with a radial travel range of 100 mm and a lateral travel range of 20 mm. | ||
| In-plane rotary motor drive, enabling a rotational speed of ≥30 rpm and continuous adjustment; substrate size: 2 inches. | ||
| Magnetron Sputtering Target Gun | Equipped with three magnetron sputtering targets (one of which is a high-magnetic-field target), with a target diameter of 2 inches, enabling confocal sputtering. | |
| Equipped with one DC sputtering power supply capable of delivering 1000 W, one RF power supply capable of delivering 500 W, and one matching box. | ||
| The target head tilt angle of the sputtering target is adjustable and comes with a built-in baffle. | ||
| Argon ion gun | Equipped with an argon ion gun and a control power supply; | |
| Argon ion energy is continuously adjustable from 0 to 2 keV, and the beam spot size is also adjustable. | ||
| Equipped with a dedicated gas-inlet fine-tuning valve. | ||
| Film thickness | Quartz Oscillation Film Thickness Meter | |
| Monitoring thin-film growth rate: 0.1–9999.9 Å/s | ||
| Film thickness measurement range: 1–9,999 Å; vibration frequency: 6 MHz; water-cooling design; CF35 flange connection. | ||
| Water cooling | The cooling circulating water system shall have a cooling capacity of ≥12 kW. | |
| Adopts a split design | ||
| Other | Aluminum alloy frame with casters and adjustable height; | |
| Standard power cabinet: All components mentioned above that involve electrical control operations such as temperature control, rotation, and gas flow control are equipped with corresponding control power supplies or controllers. | ||
| Cooling water drain; | ||
| Touch screen and associated control software. | ||
| Function | The pulsed laser deposition chamber enables RHEED oscillation monitoring for the specified sample (with epitaxial growth on an SrTiO3 substrate as the acceptance criterion, requiring no fewer than 20 oscillation cycles). | |
| The magnetron sputtering preparation chamber enables the controlled deposition of thin-film samples with thicknesses ≤2 nm (using Fe films as the acceptance criterion). |
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