Four-Target Magnetron Sputtering Coating System with a Transition Chamber

Category: Thin Film Preparation

This product can be used to fabricate single-layer or multi-layer ferroelectric films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, oxide films, hard coatings, polytetrafluoroethylene films, and more, and features standardization, modularity, and customizability.

Overview

Technical Specifications

This product is a high-cost-performance magnetron sputtering coating system independently developed by our company, featuring standardization, modularity, and customizable options. The magnetron targets are available in 1-inch, 2-inch, 3-inch, and 4-inch sizes, allowing customers to select the appropriate size based on the dimensions of the substrates to be coated. The system is equipped with a 500 W DC power supply and a 500 W RF power supply: the DC power supply is suitable for depositing metallic films, while the RF power supply is ideal for non-metallic films; four targets can meet the requirements of multi-layer or repeated coating processes. For additional coating needs, custom RF power supplies and pulsed power supplies can be configured, with a wide range of power ratings from 300 W to 1,000 W available for each type.

The equipment comprises a main chamber and a transfer chamber, with the latter equipped with a magnetic push rod; a vacuum gate valve is installed between the two chambers. While sputtering is underway in the main chamber, samples can be loaded into the transfer chamber and subjected to preliminary vacuum pumping. Once sputtering in the main chamber is complete, the samples can be transferred into the main chamber’s sample holder via the magnetic push rod. This design reduces the number of times the main chamber needs to be evacuated, thereby not only saving time but also maintaining a superior local vacuum, which effectively enhances coating quality.
This product can be used to prepare single-layer or multilayer ferroelectric films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, oxide films, hard coatings, polytetrafluoroethylene films, and more. Compared with similar equipment, this four-target magnetron sputtering coating system is not only widely applicable but also features a compact footprint and ease of operation, making it an ideal instrument for laboratory-scale thin-film fabrication. The high-vacuum environment in which the entire evaporation process takes place ensures that evaporated atoms or molecules reach the substrate directly, thereby avoiding contamination by atmospheric impurities and enhancing film quality. Moreover, the high-vacuum conditions help minimize oxidation of the evaporation materials, further improving film purity and performance.

Project Details
Sample Platform External dimensions φ150mm
Temperature control accuracy ±1℃
Heating range Room temperature to 900°C
Adjustable speed Adjustable from 1 to 20 rpm
  Sputtering direction Sputtering downward
Magnetic Control Target Gun Adjustable range of the head-target angle -45° to 45°, equipped with a pneumatic shutter
  Target material dimensions Diameter: 4 inches; thickness ≤ 3 mm
  Insulation voltage >2000V
  Quantity Three 4-inch swinging targets; one 4-inch stationary target.
  Cooling method Water cooling
  Cavity Type D-shaped cavity
Vacuum cavity Cavity dimensions Φ500mm × 500mm
  Cavity material 304 stainless steel
  Observation Window Quartz window, diameter φ100mm
  Activation method Front door open
Gas Control Traffic Control 3-way mass flow meter:
Measurement range: 0–500 SCCM;
Measurement range: 0–100 SCCM
Measurement range: 0–20 SCCM
Bipolar Pulse Magnetron Sputtering Power Supply Input voltage: 380 VAC ±10%, three-phase four-wire system, 50–60 Hz
Output power: 0–5 kW
Output voltage: 0–1000 V
Output current *up to 9 A (at constant power)
Output frequency: 1 kHz – 150 kHz
Output Characteristics: Constant Current / Constant Power / Constant Voltage
Cooling method: Air-cooled
Communication method: 0–5 V or 0–10 V analog signal, RS-485
100% duty cycle
Quantity: 1 unit
Radio Frequency Power Supply Power supply wattage 1000W
Power Output Range 0W-1000W
*High output power 1000W
*High reflection power 130W
Radio frequency 13.56 MHz ±0.005% stability
Quantity 1 unit
Direct Current Power Supply Power 1000W
Quantity 2 units
Molecular pump Molecular pump pumping speed 1200L/S
Cooling method Water cooling
Degree of vacuum 9.0×10⁻⁴ Pa
Pumping speed of the forepump 4L/S
Composite vacuum gauge Measurement range: 10⁻⁵ Pa to 10⁵ Pa
Quantity 1 set
Vacuum valve Electro-pneumatic valve
Transition Chamber The cavity dimensions must be suitable for wafers up to 6 inches in diameter.
Equipped with a molecular pump unit:
Front pump: VRD-4, pumping speed 1.1 L/s
Molecular pump: Japanese TG60F, pumping speed 60 L/s
Film thickness gauge Quantity: 1 set
Number of channels: Single channel
Measurement accuracy: 1 Å
Standard sensor quartz crystal: 6 MHz
Applicable quartz crystal size: φ14mm
Water chiller Temperature control range: 10–25°C
Rated cooling capacity: 0.75 kW
Flow rate: 10 L/min
Cooling water: purified water
Air compressor Rotational speed: 1380 rpm
Flow rate: 40 liters/minute
Rated discharge pressure: 0.7 MPa
Control System PLC + 14.3-inch touch screen

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