Four-Target Magnetron Sputtering Coating System with a Transition Chamber
Category: Thin Film Preparation
Overview
Technical Specifications
This product is a high-cost-performance magnetron sputtering coating system independently developed by our company, featuring standardization, modularity, and customizable options. The magnetron targets are available in 1-inch, 2-inch, 3-inch, and 4-inch sizes, allowing customers to select the appropriate size based on the dimensions of the substrates to be coated. The system is equipped with a 500 W DC power supply and a 500 W RF power supply: the DC power supply is suitable for depositing metallic films, while the RF power supply is ideal for non-metallic films; four targets can meet the requirements of multi-layer or repeated coating processes. For additional coating needs, custom RF power supplies and pulsed power supplies can be configured, with a wide range of power ratings from 300 W to 1,000 W available for each type.
The equipment comprises a main chamber and a transfer chamber, with the latter equipped with a magnetic push rod; a vacuum gate valve is installed between the two chambers. While sputtering is underway in the main chamber, samples can be loaded into the transfer chamber and subjected to preliminary vacuum pumping. Once sputtering in the main chamber is complete, the samples can be transferred into the main chamber’s sample holder via the magnetic push rod. This design reduces the number of times the main chamber needs to be evacuated, thereby not only saving time but also maintaining a superior local vacuum, which effectively enhances coating quality.
This product can be used to prepare single-layer or multilayer ferroelectric films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, oxide films, hard coatings, polytetrafluoroethylene films, and more. Compared with similar equipment, this four-target magnetron sputtering coating system is not only widely applicable but also features a compact footprint and ease of operation, making it an ideal instrument for laboratory-scale thin-film fabrication. The high-vacuum environment in which the entire evaporation process takes place ensures that evaporated atoms or molecules reach the substrate directly, thereby avoiding contamination by atmospheric impurities and enhancing film quality. Moreover, the high-vacuum conditions help minimize oxidation of the evaporation materials, further improving film purity and performance.
| Project | Details | |
| Sample Platform | External dimensions | φ150mm |
| Temperature control accuracy | ±1℃ | |
| Heating range | Room temperature to 900°C | |
| Adjustable speed | Adjustable from 1 to 20 rpm | |
| Sputtering direction | Sputtering downward | |
| Magnetic Control Target Gun | Adjustable range of the head-target angle | -45° to 45°, equipped with a pneumatic shutter |
| Target material dimensions | Diameter: 4 inches; thickness ≤ 3 mm | |
| Insulation voltage | >2000V | |
| Quantity | Three 4-inch swinging targets; one 4-inch stationary target. | |
| Cooling method | Water cooling | |
| Cavity Type | D-shaped cavity | |
| Vacuum cavity | Cavity dimensions | Φ500mm × 500mm |
| Cavity material | 304 stainless steel | |
| Observation Window | Quartz window, diameter φ100mm | |
| Activation method | Front door open | |
| Gas Control | Traffic Control | 3-way mass flow meter: |
| Measurement range: 0–500 SCCM; | ||
| Measurement range: 0–100 SCCM | ||
| Measurement range: 0–20 SCCM | ||
| Bipolar Pulse Magnetron Sputtering Power Supply | Input voltage: 380 VAC ±10%, three-phase four-wire system, 50–60 Hz | |
| Output power: 0–5 kW | ||
| Output voltage: 0–1000 V | ||
| Output current *up to 9 A (at constant power) | ||
| Output frequency: 1 kHz – 150 kHz | ||
| Output Characteristics: Constant Current / Constant Power / Constant Voltage | ||
| Cooling method: Air-cooled | ||
| Communication method: 0–5 V or 0–10 V analog signal, RS-485 | ||
| 100% duty cycle | ||
| Quantity: 1 unit | ||
| Radio Frequency Power Supply | Power supply wattage | 1000W |
| Power Output Range | 0W-1000W | |
| *High output power | 1000W | |
| *High reflection power | 130W | |
| Radio frequency | 13.56 MHz ±0.005% stability | |
| Quantity | 1 unit | |
| Direct Current Power Supply | Power | 1000W |
| Quantity | 2 units | |
| Molecular pump | Molecular pump pumping speed | 1200L/S |
| Cooling method | Water cooling | |
| Degree of vacuum | 9.0×10⁻⁴ Pa | |
| Pumping speed of the forepump | 4L/S | |
| Composite vacuum gauge | Measurement range: 10⁻⁵ Pa to 10⁵ Pa | |
| Quantity | 1 set | |
| Vacuum valve | Electro-pneumatic valve | |
| Transition Chamber | The cavity dimensions must be suitable for wafers up to 6 inches in diameter. | |
| Equipped with a molecular pump unit: | ||
| Front pump: VRD-4, pumping speed 1.1 L/s | ||
| Molecular pump: Japanese TG60F, pumping speed 60 L/s | ||
| Film thickness gauge | Quantity: 1 set | |
| Number of channels: Single channel | ||
| Measurement accuracy: 1 Å | ||
| Standard sensor quartz crystal: 6 MHz | ||
| Applicable quartz crystal size: φ14mm | ||
| Water chiller | Temperature control range: 10–25°C | |
| Rated cooling capacity: 0.75 kW | ||
| Flow rate: 10 L/min | ||
| Cooling water: purified water | ||
| Air compressor | Rotational speed: 1380 rpm | |
| Flow rate: 40 liters/minute | ||
| Rated discharge pressure: 0.7 MPa | ||
| Control System | PLC + 14.3-inch touch screen | |
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