Dual-Target Plasma Sputtering Coater (Basic Model)
Category: Thin Film Preparation
Overview
Technical Specifications
This product is positioned around the core principles of “dual-target synergy, plasma enhancement, dense and uniform film deposition, and precise, easy-to-control operation,” balancing research-grade precision with operational convenience. It is perfectly suited to the diverse thin-film deposition scenarios encountered in university, research institute, and corporate laboratories, providing stable and reliable hardware support for high-quality sputter deposition of materials such as metals, oxides, and semiconductors.
Key features:
1. Dual-Target Independent Sputtering: Equipped with two independent target stations, this system supports simultaneous or alternating sputtering of multiple material targets, enabling the deposition of single-layer and multilayer composite films without frequent target changes, thereby significantly enhancing experimental efficiency.
2. Plasma-Enhanced Process: This process employs plasma-enhanced sputtering to increase the ionization rate of the target material and the kinetic energy of the sputtered particles, resulting in stronger film adhesion, higher density, and a significant reduction in defect rates, thereby enabling the fabrication of high-performance functional thin films.
3. High-Vacuum Clean Coating: The high-vacuum chamber design effectively isolates the coating process from external impurities and minimizes gas interference, ensuring film purity, preventing oxidation-related defects, and meeting the requirements of high-precision coating processes.
4. Convenient and Easy-to-Use Operation: Touchscreen interface combined with preset sputtering process curves, supporting the storage and recall of multiple parameter sets to streamline operation, lower the learning curve, and minimize human error.
5. Wide range of applications: It can be used to deposit thin films on various substrates, including silicon wafers, crystals, glass, and ceramics, and is extensively employed in thin-film fabrication experiments across fields such as materials science, optoelectronic devices, semiconductor research and development, and new energy.
| Project | Details | |
| Sample Platform | Size | 100mm |
| Distance to the target surface | Height adjustable from 20 to 35 mm | |
| Plasma sputtering target | Quantity | 2 inches x 2 |
| Cooling method | Natural cooling | |
| Vacuum chamber | Cavity dimensions | φ180mm × 200mm |
| Observation Window | Omnidirectional Visibility | |
| Cavity material | High-purity quartz | |
| Activation method | Top-cover detachable | |
| Material of the top and bottom covers | 304 stainless steel | |
| Vacuum port | KF25 | |
| Intake port | 1/4-inch ferrule fitting | |
| Power Configuration | Quantity | DC power supply x1 |
| Output power | *Large 150W | |
| Sputtering power supply | 3000V | |
| *Large sputtering current | 50mA | |
| Vacuum system | Vacuum Pump Type | Two-stage rotary vane vacuum pump |
| Vacuum port | KF25 | |
| Exhaust port | KF16 | |
| Pumping speed | 1.1 L/s (4 m³/h) | |
| Ultimate vacuum degree | ≥1Pa | |
| Vacuum measurement | Resistance vacuum gauge | |
| Other | Power supply | AC 220V 50Hz |
| Total machine power | 1.5kW | |
| Overall dimensions | 570mm x 450mm x 500mm | |
| Overall weight | 30kg | |
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