Single-Target Plasma Sputtering Coater (Enhanced Type)
Category: Thin Film Preparation
Overview
Technical Specifications
This product is a single-target, plasma-enhanced sputtering deposition system specially developed to meet the high-performance thin-film fabrication needs of laboratories. With “plasma enhancement, dense and uniform film deposition, precise and easy control, and excellent cost-effectiveness” as its core positioning, it strikes an optimal balance between research-grade precision and operational convenience, making it ideally suited for fundamental thin-film deposition applications in university, research institute, and corporate laboratories. It provides stable and reliable hardware support for high-quality sputter deposition of materials such as metals, oxides, and semiconductors.
Key features:
1. Plasma-Enhanced Process: This process employs plasma-enhanced sputtering to increase the ionization rate of the target material and enhance particle energy, resulting in stronger film adhesion, higher density, and a significant reduction in defect rates—making it ideally suited for the fabrication of high-performance functional thin films.
2. Single-target precision sputtering: Equipped with a single high-purity target station for highly targeted deposition, it allows for rapid switching between targets of different materials, ensures stable and controllable sputtering processes, delivers excellent film uniformity, and meets the requirements of various precision coating experiments.
3. High-Vacuum Clean Coating: The high-vacuum chamber design effectively isolates the coating process from external impurities and reduces gas interference, ensuring film purity, preventing oxidation-related defects, and meeting the requirements of high-precision coating processes.
4. Convenient and Easy-to-Control Operation: Touchscreen interface combined with pre-set sputtering process curves, supporting the storage and recall of multiple parameter sets to streamline operation, lower the learning curve, enable quick onboarding for beginners, and minimize human error.
5. Wide range of application scenarios: It can be used to deposit thin films on various substrates, including silicon wafers, crystals, glass, and ceramics, and is extensively employed in fundamental thin-film deposition experiments across fields such as materials science, optoelectronic devices, semiconductor R&D, and new energy.
| Project | Details | |
| Sample Platform | Size | 100mm |
| Rotational speed | Adjustable from 1 to 20 rpm | |
| Heating temperature | ≤500℃ | |
| Temperature control accuracy | ±1℃ PID temperature control | |
| Plasma sputtering target | Quantity | 2 inches x 1 |
| Cooling method | Water cooling | |
| Vacuum chamber | Cavity dimensions | φ180mm X 300mm |
| Observation Window | Omnidirectional Visibility | |
| Cavity material | High-purity quartz | |
| Activation method | Top-cover detachable | |
| Material of the top and bottom covers | 304 stainless steel | |
| Vacuum port | KF25 | |
| Intake port | 1/4-inch ferrule fitting | |
| Power Configuration | Quantity | DC power supply x1 |
| Output power | *Large 150W | |
| Sputtering power supply | 3000V | |
| *Large sputtering current | 50mA | |
| Vacuum system | Vacuum Pump Type | Two-stage rotary vane vacuum pump |
| Vacuum port | KF25 | |
| Exhaust port | KF16 | |
| Pumping speed | 1.1 L/s (4 m³/h) | |
| Ultimate vacuum degree | ≥1Pa | |
| Vacuum measurement | Resistance vacuum gauge | |
| Other | Power supply | AC 220V 50Hz |
| Total machine power | 2kW | |
| Overall dimensions | 570mm x 450mm x 550mm | |
| Overall weight | 30kg | |
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