PECVD Chemical Vapor Deposition System

Category: Vapor deposition

This product employs plasma-enhanced chemical vapor deposition technology, which leverages high-energy plasma to accelerate the reaction process, thereby effectively increasing the reaction rate and reducing the reaction temperature.

Overview

Technical Specifications

This product is a high-performance instrument specifically designed for research experiments and the development of precision thin-film fabrication. With “uniform film deposition, controllable process parameters, and broad compatibility” as its core positioning, it balances research-grade precision with ease of operation, making it ideally suited for university laboratories, research institutes, and corporate R&D departments. It provides stable and reliable hardware support for the precise preparation of various functional thin films, thereby advancing research and small-batch production in fields such as materials science, semiconductors, and optoelectronics.

Key features:

  1. Core Process Advantages: This process employs plasma-enhanced chemical vapor deposition, in which plasma activates the reaction gases to enable low-temperature, rapid film formation. Compared with conventional CVD equipment, it significantly reduces the deposition temperature, thereby preventing substrate damage while ensuring high film density, strong adhesion, and uniform composition. Moreover, it allows precise control over film thickness and performance.
  2. Flexible and controllable process: Supports adjustable mixing ratios of various reactive gases (such as silane, ammonia, methane, etc.), enabling the customization of functional thin films with varying compositions and thicknesses (e.g., silicon oxide, silicon nitride, diamond-like carbon films), thereby meeting the diverse experimental and production needs in fields such as semiconductors, optoelectronics, and new energy.
  3. Convenient and Intelligent Operation: Equipped with a high-definition touch-control interface, the system comes preloaded with multiple sets of standard process parameters and supports the storage and recall of process curves, making operation simple and intuitive—even beginners can quickly get up to speed. In addition, it features a precise vacuum control system and a gas-flow regulation module, which minimize human error and ensure excellent experimental reproducibility.
  4. Highly adaptable for laboratory use: modular, compact design with a moderate footprint that optimizes space utilization, low operating noise, and easy maintenance; robust overall structure that is corrosion- and high-temperature resistant, ensuring long-term stable operation, making it suitable for laboratory research, teaching demonstrations, and small-batch precision preparation applications.
Project Details
Radio Frequency Power Supply Signal frequency 13.56MHz
Power Output Range 0~300W
Reflective power can reach 100W
Reflected Power (at Power Extremum) <5W
Power stability ±0.1%
Working chamber Heating temperature RT-400℃
Temperature control accuracy ±1℃
Sample stage dimensions Φ200mm
Sample stage rotation speed Adjustable from 1 to 20 rpm
Nozzle size Φ200mm
Distance The distance between the nozzle and the sample is continuously adjustable from 40 to 100 mm.
Vacuum deposition work 0. 133–133 Pa (adjustable based on process requirements)
flange Flip-top design for easy replacement of the base material, with a transparent window.
Cavity Stainless steel material, Φ500mm * 500mm
Observation window Φ40mm
Gas Supply System Number of channels Customization
Unit of measurement Mass flow meter
Measurement range Channel A: 0–200 SCCM for H2
Channel B: 0–200 SCCM for CH4
C channel: 0–200 SCCM for C2H4
D channel: 0–500 SCCM for N2
E channel: 0–500 SCCM for NH3
F channel: 0–500 SCCM for Ar
Measurement accuracy ±1.5% F.S
Operating pressure differential -0.15 MPa ~ 0.15 MPa
Connecting pipe material 304 stainless steel
Air circuit 304 Stainless Steel Needle Valve
Inlet and outlet interface specifications 1/4" ferrule fitting
Vacuum system Preliminary pump pumping speed 4.7L/s
Molecular pump pumping speed 60L/s
Vacuum measurement Combined vacuum gauge, range 10⁻⁵ Pa to 10⁵ Pa
Degree of vacuum 5.0×10⁻³ Pa
Water chiller Cooling water temperature ≦37℃
Water flow rate 10L/min
Power 0.1KW
Cooling power 50 W/°C
Air compressor OTS-550  
Product Dimensions 1362*736*1434
Product weight 280Kg

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