PECVD Chemical Vapor Deposition System
Category: Vapor deposition
Overview
Technical Specifications
This product is a high-performance instrument specifically designed for research experiments and the development of precision thin-film fabrication. With “uniform film deposition, controllable process parameters, and broad compatibility” as its core positioning, it balances research-grade precision with ease of operation, making it ideally suited for university laboratories, research institutes, and corporate R&D departments. It provides stable and reliable hardware support for the precise preparation of various functional thin films, thereby advancing research and small-batch production in fields such as materials science, semiconductors, and optoelectronics.
Key features:
- Core Process Advantages: This process employs plasma-enhanced chemical vapor deposition, in which plasma activates the reaction gases to enable low-temperature, rapid film formation. Compared with conventional CVD equipment, it significantly reduces the deposition temperature, thereby preventing substrate damage while ensuring high film density, strong adhesion, and uniform composition. Moreover, it allows precise control over film thickness and performance.
- Flexible and controllable process: Supports adjustable mixing ratios of various reactive gases (such as silane, ammonia, methane, etc.), enabling the customization of functional thin films with varying compositions and thicknesses (e.g., silicon oxide, silicon nitride, diamond-like carbon films), thereby meeting the diverse experimental and production needs in fields such as semiconductors, optoelectronics, and new energy.
- Convenient and Intelligent Operation: Equipped with a high-definition touch-control interface, the system comes preloaded with multiple sets of standard process parameters and supports the storage and recall of process curves, making operation simple and intuitive—even beginners can quickly get up to speed. In addition, it features a precise vacuum control system and a gas-flow regulation module, which minimize human error and ensure excellent experimental reproducibility.
- Highly adaptable for laboratory use: modular, compact design with a moderate footprint that optimizes space utilization, low operating noise, and easy maintenance; robust overall structure that is corrosion- and high-temperature resistant, ensuring long-term stable operation, making it suitable for laboratory research, teaching demonstrations, and small-batch precision preparation applications.
| Project | Details | |
| Radio Frequency Power Supply | Signal frequency | 13.56MHz |
| Power Output Range | 0~300W | |
| Reflective power can reach | 100W | |
| Reflected Power (at Power Extremum) | <5W | |
| Power stability | ±0.1% | |
| Working chamber | Heating temperature | RT-400℃ |
| Temperature control accuracy | ±1℃ | |
| Sample stage dimensions | Φ200mm | |
| Sample stage rotation speed | Adjustable from 1 to 20 rpm | |
| Nozzle size | Φ200mm | |
| Distance | The distance between the nozzle and the sample is continuously adjustable from 40 to 100 mm. | |
| Vacuum deposition work | 0. 133–133 Pa (adjustable based on process requirements) | |
| flange | Flip-top design for easy replacement of the base material, with a transparent window. | |
| Cavity | Stainless steel material, Φ500mm * 500mm | |
| Observation window | Φ40mm | |
| Gas Supply System | Number of channels | Customization |
| Unit of measurement | Mass flow meter | |
| Measurement range | Channel A: 0–200 SCCM for H2 | |
| Channel B: 0–200 SCCM for CH4 | ||
| C channel: 0–200 SCCM for C2H4 | ||
| D channel: 0–500 SCCM for N2 | ||
| E channel: 0–500 SCCM for NH3 | ||
| F channel: 0–500 SCCM for Ar | ||
| Measurement accuracy | ±1.5% F.S | |
| Operating pressure differential | -0.15 MPa ~ 0.15 MPa | |
| Connecting pipe material | 304 stainless steel | |
| Air circuit | 304 Stainless Steel Needle Valve | |
| Inlet and outlet interface specifications | 1/4" ferrule fitting | |
| Vacuum system | Preliminary pump pumping speed | 4.7L/s |
| Molecular pump pumping speed | 60L/s | |
| Vacuum measurement | Combined vacuum gauge, range 10⁻⁵ Pa to 10⁵ Pa | |
| Degree of vacuum | 5.0×10⁻³ Pa | |
| Water chiller | Cooling water temperature | ≦37℃ |
| Water flow rate | 10L/min | |
| Power | 0.1KW | |
| Cooling power | 50 W/°C | |
| Air compressor | OTS-550 | |
| Product Dimensions | 1362*736*1434 | |
| Product weight | 280Kg | |
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